ELITE (Enhanced Lock-in Thermal Emission) for Microelectronics

Our ELITE system for microelectronic devices is typically built up of

Excellent thermal resolution

Faulty microelectronic devices often show regions with locally increased power dissipation. But the temperaturetemperature
Measure of thermal energy density
increase caused by these defects is often very small in today's electronic devices (< 1-2 mK). The temperaturetemperature
Measure of thermal energy density
resolution of the most sensitive cooled IR cameras is about 10 - 30 mK and thus significantly higher. However, to detect defects in electronic devices which cause a temperaturetemperature
Measure of thermal energy density
rise < 1 mK the lock-in principle is used.

The lock-in principle increases the temperaturetemperature
Measure of thermal energy density
resolution by periodic stimulation of the devices (e.g. by voltage or light sources), recording the IR image data over several periods and calculating a result signal (so called lock-in IR thermography). Thus, by a prolonged measurement time the temperaturetemperature
Measure of thermal energy density
resolution can be significantly incresed: from < 1 mK after some seconds to up to < 10 µK after some hours. Depending on the device characteristics 10 µK correspond to a local power dissipation of approx. 1-10 µW.

Low measurement time

In contrast to many other systems the lock-in correlations (phase and amplitude) are calculated for every pixel in real-time, i.e. already during the image acquisition. This does not only reduce the average measurement time but also enables production-integrated testing operation.

High spatial resolution

In combination with special lenses and devices the spatial resolution of IR camera systems from Thermosensorik is 1 µm - 5 µm. But with the help of lock-in technology also defects in nanometer scale can be detected as the thermal diffusion acts as defect magnification. Therefore, the ELITE system from Thermosensorik GmbH is especially well-suited for detection of small defects with very low dissipated power frequently seen in microelectronic devices and solar cells. 

 

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